● Products Categories：
| Description | Application | Wavelength Range | Data sheet | Note |
|---|---|---|---|---|
| GaAs Base epiwafer | Visible LD | 635, 650~780nm |
|
Infrared LD | 808nm, 980nm and others in 800~1064nm |
|
Vertical Cavity Surface Emitting Laser (VCSEL); RCLED | 650nm, 850nm, 850~1100nm |
|
Double junction solar cell | 670nm/870nm |
|
Photo-detector | <870nm (GaAs absorptive layer) |
|
| Description | Application | Wavelength Range | Data sheet | Note |
|---|---|---|---|---|
| InP Base epiwafer | FP laser | ~1310nm; ~1550nm；~1900nm |
|
DFB laser | 1270nm~1630nm |
|
Avalanche photo-detector | 1250nm~1600nm |
|
Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer)；<1400nm (InGaAsP absorptive layer) |
|
| Description | Application | Wavelength Range | Data sheet | Note |
|---|---|---|---|---|
| Processed InP base epiwafer | RWG DFB laser (Ridge Waveguide) | 1250nm~1630nm | Please contact LandMark sales for detail information | Grating and overgrowth completed | BH-FP laser (Buried Heterostructure) | 1250nm~1630nm | Please contact LandMark sales for detail information | Current blocking & P-cladding overgrowth completed | Photo-detector | 1100nm~1600nm (InGaAs absorptive layer) | Please contact LandMark sales for detail information | Zn-diffusion completed |
● Wafers Under Developing：
| Description | Application | Wavelength Range | Data sheet | Note |
|---|---|---|---|---|
| Processed InP base epiwafer | >10G RWG DFB laser | 1250nm~1630nm | Grating and overgrowth completed | BH-DFB laser (2.5G, 10G) | 1250nm~1630nm | Current blocking & P-cladding overgrowth completed | Avalanche photo-detector (2.5G) | 1270nm~1600nm | Zn-diffusion completed |
| Description | Application | Wavelength Range | Data sheet | Note |
|---|---|---|---|---|
| GaN base epiwafer | Direct blue/Green LD | 465nm/532nm | GaN material |